Acceptor levels in gallium arsenide (luminescence measurements)
- 11 June 1973
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 6 (11), L243-L246
- https://doi.org/10.1088/0022-3719/6/11/008
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- Shallow acceptor luminescence in GaAs grown by liquid phase epitaxySolid State Communications, 1972
- Zeeman spectra of the principal bound exciton in Sn-doped gallium arsenideSolid State Communications, 1972
- Angular Momentum Theory and Localized States in Solids. Investigation of Shallow Acceptor States in SemiconductorsPhysical Review Letters, 1970
- Photolumineszenz-spektrum des Sn-Akzeptors in GaAsSolid State Communications, 1970
- Bound exciton luminescence in epitaxial Sn-doped gallium-arsenideJournal of Luminescence, 1970
- Optical Properties of the Group IV Elements Carbon and Silicon in Gallium PhosphideJournal of Applied Physics, 1968