The electrical resistivity of bismuth:electron-hole scattering
- 1 November 1976
- journal article
- Published by IOP Publishing in Journal of Physics F: Metal Physics
- Vol. 6 (11), L301-L302
- https://doi.org/10.1088/0305-4608/6/11/002
Abstract
Anagnostopoulos et al. (ibid., vol.6, p.L181, 1976) concluded that an explanation of the observed T2 low temperature electrical resistivity of bismuth in terms of carrier-carrier scattering was 'unnecessary'. The present authors believe this conclusion is unwarranted. The physics of electron-hole scattering leads to a T2 term in the resistivity of all semimetals at low T. Their estimate of the size of this effect in bismuth is consistent with that observed.Keywords
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