Deep traps in GaAs revealed at high resolution by simple fast photocapacitance methods
- 1 February 1976
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 5 (1), 91-107
- https://doi.org/10.1007/bf02652888
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- A simple analytic expression for optical cross sections associated with deep impurity states in semiconductorsJournal of Physics C: Solid State Physics, 1975
- Deep levels in gallium arsenide by capacitance methodsApplied Physics A, 1974
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974
- Deep Energy Levels in the High Resistance Region at GaAs Vapor Epitaxial Film-Substrate InterfaceJapanese Journal of Applied Physics, 1970
- On the photoionization of deep impurity centers in semiconductorsSolid State Communications, 1965