Ga0.80In0.20As 1.20-eV high quantum efficiency junction for multijunction solar cells
- 15 November 1982
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 41 (10), 984-986
- https://doi.org/10.1063/1.93364
Abstract
A Ga0.80In0.20As junction for solar cell applications grown on GaAs by organometallic vapor phase epitaxy (OMVPE) with a peak collection quantum efficiency of 92% is reported. This junction is fabricated using step‐graded layers to reduce misfit dislocations between the junction and the substrate. The effects of step grading on the projected short circuit current density, peak quantum efficiency, and diode ideality factor have been measured. With grading, the ideality factor is reduced from n=2.7 to 1.2 for current densities greater than 0.01 A/cm2. This high‐performance Ga0.80In0.20As can serve as an excellent low‐gap junction for multijunction solar cells.Keywords
This publication has 7 references indexed in Scilit:
- High-efficiency organometallic vapor phase epitaxy AlGaAs/GaAs monolithic cascade solar cell using metal interconnectsApplied Physics Letters, 1982
- The growth and characterization of uniform Ga1-xInxAs (X ≤.25) by Organometallic VPEJournal of Electronic Materials, 1981
- Improved mobility in OM-VPE-grown Ga1−xInxAsElectronics Letters, 1981
- Vapor phase epitaxially grown InGaAs photodiodesIEEE Transactions on Electron Devices, 1980
- Almost perfect epitaxial multilayersJournal of Vacuum Science and Technology, 1977
- Device quality epitaxial gallium arsenide grown by the metal alkyl-hydride techniqueJournal of Crystal Growth, 1975
- Optical gating and logic with pyroelectric crystalsApplied Physics Letters, 1974