C-V and G-V characterization of in-situ fabricated Ga2O3GaAs interfaces for inversion/accumulation device and surface passivation applications
- 31 August 1996
- journal article
- review article
- Published by Elsevier in Solid-State Electronics
- Vol. 39 (8), 1133-1136
- https://doi.org/10.1016/0038-1101(96)00006-8
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- New frontiers of molecular beam epitaxy with in-situ processingJournal of Crystal Growth, 1995
- Ga2O3 films for electronic and optoelectronic applicationsJournal of Applied Physics, 1995
- Si3N4/Si/n-GaAs capacitor with minimum interface density in the 1010 eV−1 cm−2 rangeApplied Physics Letters, 1993
- Hydrogen sulfide plasma passivation of gallium arsenideApplied Physics Letters, 1992
- Enhanced electronic properties of GaAs surfaces chemically passivated by selenium reactionsJournal of Applied Physics, 1990
- Unpinned gallium oxide/GaAs interface by hydrogen and nitrogen surface plasma treatmentApplied Physics Letters, 1989
- Analysis of native oxide films and oxide-substrate reactions on III–V semiconductors using thermochemical phase diagramsThin Solid Films, 1983
- GaAs metallization: Some problems and trendsJournal of Vacuum Science and Technology, 1981
- Unified defect model and beyondJournal of Vacuum Science and Technology, 1980
- Surface states at steam-grown silicon-silicon dioxide interfacesIEEE Transactions on Electron Devices, 1966