The transition from two- to one-dimensional electronic transport in narrow silicon accumulation layers
- 30 December 1982
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 15 (36), L1287-L1297
- https://doi.org/10.1088/0022-3719/15/36/005
Abstract
No abstract availableKeywords
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