Coulomb blockade in a silicon tunnel junction device
- 18 April 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (16), 2119-2120
- https://doi.org/10.1063/1.111702
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Conductance oscillations periodic in the density of one-dimensional electron gasesPhysical Review B, 1990
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- C.M.O.S. devices fabricated on buried SiO2 layers formed by oxygen implantation into siliconElectronics Letters, 1978