Effect of Hole-Hole Scattering on the Mobility ofp-Type Germanium

Abstract

A quantitative comparison between theory and experiment is presented for the effect of hole-hole scattering on the mobility in both uncompensated and heavily compensated $p$-type germanium. In the former case, excellent agreement is obtained for impurity concentrations $N_{\mathrm{I}}\le {10}^{16}$ ${\mathrm{cm}}^{-3\mathrm{}}$. An appreciable discrepancy is noted for compensated samples which is attributed to the use of the Born-approximation scattering cross section which gives equal weight to scattering of holes by ionized donors and acceptors.