High‐Mobility p‐Type Transistor Based on a Spin‐Coated Metal Telluride Semiconductor
- 12 September 2006
- journal article
- research article
- Published by Wiley in Advanced Materials
- Vol. 18 (18), 2448-2452
- https://doi.org/10.1002/adma.200600157
Abstract
No abstract availableKeywords
This publication has 27 references indexed in Scilit:
- Solution-Processed Metal Chalcogenide Films for p-Type TransistorsChemistry of Materials, 2006
- PbSe Nanocrystal Solids for n- and p-Channel Thin Film Field-Effect TransistorsScience, 2005
- Polymorphic One-Dimensional (N2H4)2ZnTe: Soluble Precursors for the Formation of Hexagonal or Cubic Zinc TellurideInorganic Chemistry, 2005
- Low‐Voltage Transistor Employing a High‐Mobility Spin‐Coated Chalcogenide SemiconductorAdvanced Materials, 2005
- Poly(3,3‘ ‘-dialkylterthiophene)s: Room-Temperature, Solution-Processed, High-Mobility Semiconductors for Organic Thin-Film TransistorsChemistry of Materials, 2004
- Solution-processed inorganic semiconductorsJournal of Materials Chemistry, 2004
- High-mobility ultrathin semiconducting films prepared by spin coatingNature, 2004
- Flexible active-matrix displays and shift registers based on solution-processed organic transistorsNature Materials, 2004
- Organic-Inorganic Hybrid Materials as Semiconducting Channels in Thin-Film Field-Effect TransistorsScience, 1999
- All-Inorganic Field Effect Transistors Fabricated by PrintingScience, 1999