Silicon Dioxide Passivation of p-n Junction Particle Detectors

Abstract

Silicon p‐n junction particle detectors present unusual passivation problems because of the shallow diffusions and large exposed junction areas involved. The use of silicon dioxide films for reducing the ambient sensitivity of junction detectors has been investigated, and grown‐oxide films produced with high pressure steam have been studied in detail. The dependence of ambient sensitivity on such parameters as bulk silicon resistivity, diffusant, and diffusion temperature has been investigated. Methods of fabrication of ambient insensitive diodes and more complicated guard‐ring structures are also discussed.