Optically induced electromagnetic radiation from semiconductor surfaces
- 28 May 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (22), 2228-2230
- https://doi.org/10.1063/1.102952
Abstract
Ultrafast electromagnetic radiation induced by a femtosecond laser beam from a semiconductor provides determination of the impurity doping concentration, carrier mobility, sign, and strength of the depletion field near the semiconductor surface.link_to_subscribed_fulltexKeywords
This publication has 5 references indexed in Scilit:
- Subpicosecond electromagnetic pulses from large-aperture photoconducting antennasOptics Letters, 1990
- Generation of femtosecond electromagnetic pulses from semiconductor surfacesApplied Physics Letters, 1990
- Terahertz beamsApplied Physics Letters, 1989
- Picosecond response of photoexcited GaAs in a uniform electric field by Monte Carlo dynamicsPhysical Review B, 1988
- Subpicosecond photoconducting dipole antennasIEEE Journal of Quantum Electronics, 1988