DIRECT OBSERVATION OF THE DRIFT VELOCITY AS A FUNCTION OF THE ELECTRIC FIELD IN GALLIUM ARSENIDE
- 15 October 1966
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 9 (8), 283-285
- https://doi.org/10.1063/1.1754751
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Calculation of the velocity-field characteristic for gallium arsenidePhysics Letters, 1966
- Some properties of the moving high-field domain in Gunn effect devicesIEEE Transactions on Electron Devices, 1966
- The Gunn effect in polar semiconductorsIEEE Transactions on Electron Devices, 1966
- The intervalley transfer mechanism of negative resistivity in bulk semiconductorsProceedings of the Physical Society, 1965
- Hot electrons and negative resistance at 20°K In n-type germanium containing Au− centresJournal of Physics and Chemistry of Solids, 1965
- Instabilities of Current in III–V SemiconductorsIBM Journal of Research and Development, 1964
- Optical Absorption of Gallium Arsenide between 0.6 and 2.75 eVPhysical Review B, 1962
- Transferred Electron Amplifiers and OscillatorsProceedings of the IRE, 1962
- Negative resistance and high electric field capture rates in semiconductorsJournal of Physics and Chemistry of Solids, 1961
- The Possibility of Negative Resistance Effects in SemiconductorsProceedings of the Physical Society, 1961