Atomistic modeling of finite-temperature properties of crystalline β-SiC
- 1 June 1998
- journal article
- Published by Elsevier in Journal of Nuclear Materials
- Vol. 255 (2-3), 139-152
- https://doi.org/10.1016/s0022-3115(98)00034-8
Abstract
No abstract availableThis publication has 29 references indexed in Scilit:
- Molecular dynamics determination of defect energetics in beta -SiC using three representative empirical potentialsModelling and Simulation in Materials Science and Engineering, 1995
- Feasibility study on the application of the method of the resolvent matrix to complex systemsPhysical Review B, 1993
- Contribution of thermal conductivity to the crystal-regrowth velocity of embedded-atom-method-modeled metals and metal alloysPhysical Review B, 1992
- Reduction of the thermal conductivity of SiC by radiation damageJournal of Nuclear Materials, 1991
- Formation energies, abundances, and the electronic structure of native defects in cubic SiCPhysical Review B, 1988
- Molecular dynamics with coupling to an external bathThe Journal of Chemical Physics, 1984
- On the low temperature lattice thermal conductivity of solid argonPhysica Status Solidi (b), 1977
- Analysis of lattice thermal conductivity of solid argon at low temperaturesPhysica Status Solidi (b), 1977
- Thermal conductivity of neutron-irradiated pyrolytic β-silicon carbideJournal of Nuclear Materials, 1973
- Markoff Random Processes and the Statistical Mechanics of Time-Dependent Phenomena. II. Irreversible Processes in FluidsThe Journal of Chemical Physics, 1954