Experimental verification of the Shockley–Read–Hall recombination theory in silicon

Abstract

The dependence of carrier lifetime on injection level has been measured in silicon power devices. As examples, the results of an Au-doped and an as-processed, not intentionally doped, specimen are given. The experimental results confirm the Shockley–Read–Hall recombination theory. The ratio of the capture cross-sections of the holes and electrons is calculated.