Epitaxially Grown Diamond (001) 2×1/1×2 Surface Investigated by Scanning Tunneling Microscopy in Air
- 1 May 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (5R), 1063
- https://doi.org/10.1143/jjap.30.1063
Abstract
Scanning tunneling microscopy (STM) observation was performed for the surface of diamond epitaxial film which was grown on a diamond (001) substrate by microwave plasma-assisted chemical vapor deposition (CVD). The surface was stable even in air, and it showed a reflection high-energy electron diffraction (RHEED) pattern of the 2×1/1×2 structure. Images of the atomic level corresponding to the RHEED pattern were obtained by STM in air. Significant extension of dimer rows was observed over the entire surface. Strong similarity between Si(001) grown by molecular beam epitaxy (MBE) and diamond (001) grown by CVD was shown.Keywords
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