Raman investigations of reaction process in MOVPE
- 1 September 1986
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 77 (1-3), 172-181
- https://doi.org/10.1016/0022-0248(86)90298-8
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Mechanistic studies of the decomposition of trimethylaluminum on heated surfacesJournal of Vacuum Science & Technology B, 1985
- Mass Spectrometric Study of Ga ( CH 3 ) 3 and Ga ( C 2 H 5 ) 3 Decomposition Reaction in H 2 and N 2Journal of the Electrochemical Society, 1985
- Thermodynamic aspects of OMVPEJournal of Crystal Growth, 1984
- Growth of multiple thin layer structures in the GaAs-AlAs system using a novel VPE reactorJournal of Crystal Growth, 1984
- On the effect of carrier gas on growth conditions in MOCVD reactors; Raman study of local temperatureJournal of Crystal Growth, 1984
- On the Reaction Mechanism of GaAs MOCVDJournal of the Electrochemical Society, 1983
- Gas Flow Patterns in Horizontal Epitaxial Reactor Cells Observed by Interference HolographyJournal of the Electrochemical Society, 1982
- A study of the growth mechanism of epitaxial GaAs as grown by the technique of metal organic vapour phase epitaxyJournal of Crystal Growth, 1981
- Reaction of trimethylgallium with tin, silicon, germanium and arsenic filmsJournal of Organometallic Chemistry, 1974
- Mass Spectrometric Studies of Vapor Phase Crystal GrowthJournal of the Electrochemical Society, 1971