Using the semiconductor junction in quantum interference devices
- 1 January 1974
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 45 (1), 366-368
- https://doi.org/10.1063/1.1662986
Abstract
We have fabricated small‐area tunnel junctions of a lead‐tellurium‐lead structure. These have been used in conjunction with bulk superconductors to make hybrid quantum interference devices. We have successfully operated these devices at bias frequencies of 30 MHz, 300 MHz, and 10 GHz.Keywords
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