Ambipolar Surface Conduction in Ternary Topological Insulator Bi2(Te1–xSex)3 Nanoribbons
- 8 March 2013
- journal article
- research article
- Published by American Chemical Society (ACS) in ACS Nano
- Vol. 7 (3), 2126-2131
- https://doi.org/10.1021/nn304684b
Abstract
We report the composition- and gate voltage-induced tuning of transport properties in chemically synthesized Bi2(Te1–xSex)3 nanoribbons. It is found that increasing Se concentration effectively suppresses the bulk carrier transport and induces semiconducting behavior in the temperature-dependent resistance of Bi2(Te1–xSex)3 nanoribbons when x is greater than ∼10%. In Bi2(Te1–xSex)3 nanoribbons with x ≈ 20%, gate voltage enables ambipolar modulation of resistance (or conductance) in samples with thicknesses around or larger than 100 nm, indicating significantly enhanced contribution in transport from the gapless surface states.Keywords
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This publication has 33 references indexed in Scilit:
- Two-dimensional surface state in the quantum limit of a topological insulatorNature Physics, 2010
- Colloquium: Topological insulatorsReviews of Modern Physics, 2010
- Massive Dirac Fermion on the Surface of a Magnetically Doped Topological InsulatorScience, 2010
- Crossover of the three-dimensional topological insulator Bi2Se3 to the two-dimensional limitNature Physics, 2010
- The birth of topological insulatorsNature, 2010
- STM Imaging of Electronic Waves on the Surface of: Topologically Protected Surface States and Hexagonal Warping EffectsPhysical Review Letters, 2010
- Observation of Time-Reversal-Protected Single-Dirac-Cone Topological-Insulator States inandPhysical Review Letters, 2009
- Experimental Realization of a Three-Dimensional Topological Insulator, Bi 2 Te 3Science, 2009
- Observation of a large-gap topological-insulator class with a single Dirac cone on the surfaceNature Physics, 2009
- Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surfaceNature Physics, 2009