Quarter micron low noise GaAs FET's

1 December 1982

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 3 (12), 401-403
https://doi.org/10.1109/EDL.1982.25614

Abstract

New quarter-micron gate GaAs MESFET's fabricated with optical lithography have yielded the best noise figures ever reported for FET's at frequencies between 12 and 32 GHz.

Keywords

GALLIUM ARSENIDE
FETS
NOISE FIGURE
FREQUENCY
BONDING
GOLD
MICROSTRIP
OPTICAL NOISE
MESFETS
LITHOGRAPHY

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