Electro-Optic Coefficients in III-V Compounds

Abstract

The electro-optic coefficients ${{\chi }_{E0\mathrm{}}}^{\mathrm{}\left(2\right)\mathrm{}}$ for six III-V compounds InSb, InAs, InP, GaSb, GaAs, and GaP with the zinc-blende structure are calculated using an electrostatic point-charge model. An interpretation of the Faust-Henry result for GaP is presented and an approximate relation is shown to exist between the Faust-Henry coefficient $C$ and the electronic deformation part of the transverse effective charge ${e_T}^{+}$ in these compounds. The case of CuCl is also briefly discussed.