Detection of slow traps in the oxide of MOS transistors by a new current DLTS technique
- 17 March 1994
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 30 (6), 484-485
- https://doi.org/10.1049/el:19940345
Abstract
It is shown that in MOS transistors, the traps in the oxide that interact with the semiconductor by the tunnelling of carriers, induce a transient on the drain current when the device is switched from accumulation to strong inversion. Their density can be extracted as in deep level transient spectroscopy.Keywords
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