Planar n-GaAs/N-GaAlAs microwave diodes

Abstract

Planar microwave diodes have been fabricated from n-GaAs/N-(GaAl)As heterojunction layers grown on semi-insulating substrates by l.p.e. The diodes have successfully been used for detection and, for the first time, for down-conversion of X- and Ku-band signals, indicating that this type of diode is an attractive substitute for the Schottky-barrier diode. Planar microwave diodes have been fabricated from n-GaAs/N-(GaAl)As heterojunction layers grown on semi-insulating substrates by l.p.e. The diodes have successfully been used for detection and, for the first time, for down-conversion of X- and Ku-band signals, indicating that this type of diode is an attractive substitute for the Schottky-barrier diode.