High-reflectivity AlGaInAs/InP multilayer mirrors grown by low-pressure MOVPE for application to long-wavelength high-contrast-ratio multi-quantum-well modulators

Abstract
We report the first high-reflectivity multilayer dielectric mirrors fabricated from MOVPE-grown AlIGaInAs/InP for long-wavelength operation. Mirrors have been fabricated from 40-layer structures using a 1.3μm composition AlGaInAs which exhibit reflectivities as high as 95% in the wavelength range 1.55–1.7μm.