A new approach to optimizing the base profile for high-speed bipolar transistors
- 1 April 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 11 (4), 149-152
- https://doi.org/10.1109/55.61777
Abstract
It is shown using first-order analytical analysis and extensive device simulations that, for a given base resistance and peak base doping, a uniform base profile gives a higher cutoff frequency than a graded profile. This result is explained by the narrower base width that can be achieved with a uniform profile, which more than compensates for the lack of the aiding electric field present in graded-base transistors.Keywords
This publication has 5 references indexed in Scilit:
- Emitter and base fabrication in advanced bipolar transistors using gas immersion laser dopingPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Thin base formation by double diffused polysilicon technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Reduction of f/sub t/ by nonuniform base bandgap narrowingIEEE Electron Device Letters, 1989
- A simple regional analysis of transit times in bipolar transistorsSolid-State Electronics, 1986
- Measurements of bandgap narrowing in Si bipolar transistorsSolid-State Electronics, 1976