Atom probe analysis of planar multilayer structures

Abstract

Atom probe field ion microscopy has been used to analyze a planar-deposited layered structure in plan view. The specimens were prepared with a newly developed method that involves a combination of photolithography and focused ion-beam milling. A multilayer structure consisting of $\{{\mathrm{Ta/CoFe/(Cu/CoFe)}}_{\mathrm{15}}{\mathrm{/Ru/(CoFe/Ru)}}_{\mathrm{5}}\mathrm{/Ru/NiFe}\}$ was sputter deposited for use as a test stack. The corresponding thicknesses of these layers were 7/13(3/3)/50/(3/1)/50/150 nm. The nanometer-scale periodicity of the Cu/CoFe stack is readily apparent in transmission electron microscopy images of a field ion specimen fabricated from this material, suggesting that the specimen preparation procedure does not lead to destruction of the multilayer structure. Atom probe analysis of the bulk NiFe layer and the Ru/NiFe interface revealed the distribution of impurity atoms in the film, and these may affect the magnetic properties of the multilayers. Whereas a uniform distribution of C, N and Ar was observed, segregation of O was observed in the NiFe layer within ∼0.25 nm of the interphase interface, with a concentration greater than 20 times that found in the bulk of the NiFe layer.