Isothermal Capacitance Transient Spectroscopy in ZnO Varistor
- 1 April 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (4A), L714
- https://doi.org/10.1143/jjap.28.l714
Abstract
Isothermal capacitance transient spectroscopy was applied to the ZnO varistor. Spectroscopic signals obtained at around room temperature were related to the interface state of 0.60 eV below the conduction band edge. Furthermore, a bulk trap of 0.27 eV was detected at lower temperatures (121 K∼153 K), which corresponds to the result obtained by admittance spectroscopy.Keywords
This publication has 11 references indexed in Scilit:
- The deep level transient spectroscopy studies of a ZnO varistor as a function of annealingJournal of Applied Physics, 1988
- Admittance Spectroscopy of Polycrystalline ZnO‐Bi2O3 and ZnO‐BaO SystemsJournal of the American Ceramic Society, 1988
- Electroluminescence in ZnO varistors: Evidence for hole contributions to the breakdown mechanismJournal of Applied Physics, 1985
- Degradation mechanism of zinc oxide varistors under dc biasJournal of Applied Physics, 1982
- Properties of Deep Levels in ZnO Varistors and Their Effect on Current-Response CharacteristicsJapanese Journal of Applied Physics, 1980
- DLTS Measurement on Non-Ohmic Zinc Oxide Ceramic VaristorJapanese Journal of Applied Physics, 1980
- Isothermal Capacitance Transient Spectroscopy for Determination of Deep Level ParametersJapanese Journal of Applied Physics, 1980
- Electrical Conduction of ZnO Varistors under Continuous DC StressJapanese Journal of Applied Physics, 1980
- The dc voltage dependence of semiconductor grain-boundary resistanceJournal of Applied Physics, 1979
- Thermally Stimulated Current in Nonohmic ZnO CeramicsJapanese Journal of Applied Physics, 1977