Stacking Faults in Epitaxial Silicon
- 1 April 1962
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 33 (4), 1536-1537
- https://doi.org/10.1063/1.1728767
Abstract
Stacking faults have been detected in etched thin foils of epitaxially grown silicon by means of optical and electron microscope transmission techniques. The faults lie in (111) planes and either form closed figures or are bounded by dislocations.Keywords
This publication has 2 references indexed in Scilit:
- Growth of Single Crystal Silicon Overgrowths on Silicon SubstratesJournal of the Electrochemical Society, 1960
- Electron diffraction from crystals containing stacking faults: IPhilosophical Magazine, 1957