Universal description of channel conductivity for nanotube and nanowire transistors
- 19 August 2003
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 83 (8), 1623-1625
- https://doi.org/10.1063/1.1604462
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Transport through the interface between a semiconducting carbon nanotube and a metal electrodePhysical Review B, 2002
- Carbon Nanotubes as Schottky Barrier TransistorsPhysical Review Letters, 2002
- ATOMISTIC CAPACITANCE OF A NANOTUBE ELECTROMECHANICAL DEVICEInternational Journal of Nanoscience, 2002
- Electrical transport properties of individual gallium nitride nanowires synthesized by chemical-vapor-depositionApplied Physics Letters, 2002
- Performance projections for ballistic carbon nanotube field-effect transistorsApplied Physics Letters, 2002
- Nanotube devices: A microscopic modelJETP Letters, 2002
- Carbon nanotube field-effect invertersApplied Physics Letters, 2001
- Doping and Electrical Transport in Silicon NanowiresThe Journal of Physical Chemistry B, 2000
- Influence of contacts on the conductivity of thin wiresJournal of Applied Physics, 1998
- High Speed Quasi-One-Dimensional Electron Transport in InAs/AlGaSb Mesoscopic DevicesPhysica Status Solidi (b), 1997