Resonant excitation of a layer of Si donors in GaAs
- 1 July 1989
- journal article
- letter
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 4 (7), 571-573
- https://doi.org/10.1088/0268-1242/4/7/013
Abstract
The authors consider the resonant absorption of infrared radiation by a sharply defined layer of donor atoms in GaAs. It is shown that in all essential respects this density-tunable resonance is comparable with the signal obtained on quantum well heterostructures. This suggests that it is possible to create a detector structure without a heterojunction interface.Keywords
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