A new technique is described for reliably forming low resistance links by using a laser to bridge a lateral gap between two Al conductors deposited on insulating polysilicon. Resistances in the range of 1-10 ohms were achieved for gap widths of approximately 2-3 microns using 1 msec pulses from an argon laser. This technique should be ideally suited to implementing defect avoidance using redundancy in large RAM's and complex VLSI circuits. It requires a single level of metal and should provide higher density and lower capacitance when compared to alternative techniques.