Effects of annealing on the carrier concentration of heavily Si-doped GaAs
- 1 February 1973
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 44 (2), 912-914
- https://doi.org/10.1063/1.1662287
Abstract
Isothermal and isochronal annealing measurements were performed on heavily Si‐doped GaAs. Infrared reflectivity measurements were used to determine the free‐carrier concentration after each annealing stage. A factor of [inverted lazy s]5 decrease in free‐carrier concentration was observed as a result of annealing at temperatures as low as 400°C. This annealing effect can be important when fabricating devices using GaAs: Si. Possible explanations of this effect are discussed.Keywords
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