Antireflection properties of indium tin oxide (ITO) on silicon for photovoltaic applications
- 1 October 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 35 (7), 495-497
- https://doi.org/10.1063/1.91184
Abstract
The short‐circuit current density (Jsc) of indium tin oxide (ITO/silicon solar cells has been shown both theoretically and experimentally to be a function of the thickness of the ion beam sputtered ITO layer. These results can be accounted for by computing the optical reflection from the ITO/silicon interface.Keywords
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