Influence of Power-Source Frequency on the Properties of GD a-Si:H

Abstract

The influence of power-source frequency on the film properties of glow-discharge (GD) amorphous silicon has been studied in the range from 10 kHz to 50 MHz. Mechanical property, rather than photoelectric properties of the film, is highly influenced by the frequency, i.e., compressive internal stress is stored in the film when deposited from SiH₄ plasma operated by a frequency lower than 500 kHz. It has been demonstrated through mass spectrometric measurements that the internal stress is caused by ion bombardment on the growing surface of the film.