Atomic-structure-dependent Schottky barrier at epitaxial Pb/Si(111) interfaces
- 26 March 1990
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 64 (13), 1589-1592
- https://doi.org/10.1103/physrevlett.64.1589
Abstract
The Schottky barrier of Pb grown epitaxially on n-type Si(111) has been studied. Two structures can be formed, which differ only in the arrangement of the first layer of Pb and Si atoms at the interface. One, a Si(111)(7×7)-Pb structure, has a Schottky-barrier height of 0.70 eV. The other, a Si(111)(√3 × √3 )R30°-Pb structure, has a barrier height of 0.93 eV. These results emphasize the importance of the local electronic structure for Schottky-barrier formation at ordered interfaces.Keywords
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