Doping-induced and photo-induced modification of electron-emission rate at localized states in P-doped a-Si:H
- 1 December 1983
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 59-60, 437-440
- https://doi.org/10.1016/0022-3093(83)90614-2
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
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- Temperature dependence of electron-capture cross section of localized states inPhysical Review B, 1983
- Doping and the Fermi Energy in Amorphous SiliconPhysical Review Letters, 1982
- Energy dependence of electron-capture cross section of gap states in-type-Si:HPhysical Review B, 1982
- Characteristics of Schottky Barrier Diodes in P-doped Amorphous Si: HJapanese Journal of Applied Physics, 1982
- Determination of the Density of State Distribution of a-Si:H by Isothermal Capacitance Transient SpectroscopyJapanese Journal of Applied Physics, 1981
- Optically induced conductivity changes in discharge-produced hydrogenated amorphous siliconJournal of Applied Physics, 1980