Internal Pulse Amplification in Silicon p-n Junction Radiation Detection Junctions

Abstract

Internal pulse amplification in silicon p‐n junction radiation detectors has been observed in the energy range from 0.05 to 1.0 MeV incident. The detectors are operated in the preavalanche region with significant multiplication occurring at internal electric field values of greater than 150 kV/cm. Pulse resetimes as fast as 4 nsec have been measured for internally amplified pulses.