Internal Pulse Amplification in Silicon p-n Junction Radiation Detection Junctions
- 1 September 1964
- journal article
- research article
- Published by AIP Publishing in Review of Scientific Instruments
- Vol. 35 (9), 1220-1222
- https://doi.org/10.1063/1.1719002
Abstract
Internal pulse amplification in silicon p‐n junction radiation detectors has been observed in the energy range from 0.05 to 1.0 MeV incident. The detectors are operated in the preavalanche region with significant multiplication occurring at internal electric field values of greater than 150 kV/cm. Pulse resetimes as fast as 4 nsec have been measured for internally amplified pulses.Keywords
This publication has 2 references indexed in Scilit:
- Stable, High Field Silicon p-n Junction Radiation DetectorsReview of Scientific Instruments, 1963
- Electron Multiplication in Silicon and GermaniumPhysical Review B, 1953