Photo-induced changes in the coefficient of the temperature dependence of the Fermi level in discharge-produced amorphous silicon
- 1 January 1982
- journal article
- Published by EDP Sciences in Journal de Physique
- Vol. 43 (9), 1419-1424
- https://doi.org/10.1051/jphys:019820043090141900
Abstract
New data on photo-induced changes in the photoconductivity σp and dark conductivity σD (Staebler-Wronski effect) of a-Si : H are described. Some films are shown to be much less sensitive to light exposure than others : the change in the activation energy ΔEσ of σD between the annealed state A and the fully-irradiated state B is small and in some cases ΔEσ ≃ 0. The results are interpreted in terms of minimum metallic conductivity theory and the change in the coefficient of the temperature dependence of the Fermi level (βA - β B) between states A and B is calculated. Upper and lower bounds of β A and βB are deduced. It is found that for films exhibiting large photo-induced effects β B > βA. The coefficient βB is positive and typically ∼ 4-10 x 10-4 eV K-1. In contrast for most films exhibiting small changes upon illumination both β A and βB are negative and the change when passing from state A to state B is smallKeywords
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