Effect of Carrier Heating on the Diffusion Currents in Space-Charge-Limited Current Flow
- 1 November 1967
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 38 (12), 4596-4608
- https://doi.org/10.1063/1.1709191
Abstract
The theory of hot electron diffusion is developed for the case of space‐charge‐limited current flow in insulators or weakly doped semiconductors. To compare the results of the calculation with experiments on silicon n+‐π‐n+ structures by Denda and Nicolet, a crude theory of the uniform‐field hot‐electron effect in n‐type silicon is developed.Keywords
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