Steady State Photocapacitance Study of Semiconductor/Aqueous Electrolyte Junctions: I. Interest and Difficulties in the Case of n‐GaAs
- 1 May 1988
- journal article
- research article
- Published by Wiley in Berichte der Bunsengesellschaft für physikalische Chemie
- Vol. 92 (5), 566-572
- https://doi.org/10.1002/bbpc.198800137
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Photocapacitance study of n-GaAs/electrolyte interfacesBerichte der Bunsengesellschaft für physikalische Chemie, 1987
- Flatband potential determination and surface modifications at semiconductor-liquid junctionsSolid State Communications, 1985
- Photocapacitance spectroscopy of surface states on indium phosphide photoelectrodesApplied Physics Letters, 1984
- Cadmium Selenide Interface States Studied by Electrochemical Photocapacitance SpectroscopyJournal of the Electrochemical Society, 1984
- An easy method to determine carrier-capture cross sections: Application to GaAsJournal of Applied Physics, 1984
- Electrochemical Photocapacitance Spectroscopy Method for Characterization of Deep Levels and Interface States in Semiconductor MaterialsJournal of the Electrochemical Society, 1984
- Fundamentals of junction measurements in the study of deep energy levels in semiconductorsJournal of Physics E: Scientific Instruments, 1981
- Deep-level optical spectroscopy in GaAsPhysical Review B, 1981
- Photocapacitance effects of deep traps in epitaxial GaAsJournal of Applied Physics, 1976
- Photocapacitance Studies of the Oxygen Donor in GaP. I. Optical Cross Sections, Energy Levels, and ConcentrationPhysical Review B, 1973