Electrical transport measurements in a gasketed diamond anvil cell up to 18 GPa

Abstract

A four‐probe technique for electrical and photoelectrical measurements in a gasketed diamond anvil cell is presented. The special anvil profile and the method for the gasket preparation used in these experiments are described. Insulation and continuity of the electrical leads are shown to be satisfactory at least up to 18 GPa. As an example we report photoconductivity measurements in GaAs beyond crossover, under pressure, between direct and indirect band‐gap configurations.