Preparation of Garnet Films by Sputtering

Abstract

Three different sputtering approaches are described for the synthesis of garnet films in the thickness range of 0–4 μ. The experimental requirements for producing single‐phase, polycrystalline GdIG films are described in some detail, especially in the rf sputtering mode. Unexpectedly large systematic variations in the unit lattice parameter of the garnet structure as a function of film thickness are reported. Possible causes for these systematic structural changes are discussed.