Diffusion of silicon in gallium arsenide using rapid thermal processing: Experiment and model

Abstract

Rapid thermal processing was used to diffuse Si into GaAs from a thin elemental source. Several encapsulants were applied. The diffusion was found to be dependent on the type of encapsulant. A model is developed based on the formation and rapid diffusion of Si nearest neighbor donor-acceptor pairs. Results from the codiffusion of Si and Ge support this model.