Selective Deposition and Bond Strain Relaxation in Silicon PECVD Using Time Modulated Silane Flow
- 1 June 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (6S), 1943-1947
- https://doi.org/10.1143/jjap.31.1943
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Hydrogen as a Probe of Semiconductor Surface Structure: The Ge(111)-c(2 × 8) SurfaceScience, 1992
- A novel preparation technique for preparing hydrogenated amorphous silicon with a more rigid and stable Si networkApplied Physics Letters, 1991
- The driving force behind the chemistry of hydrogen on the Si(111)-7×7 surfaceJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- The importance of structure and bonding in semiconductor surface chemistry: hydrogen on the Si(111)-7 × 7 surfaceSurface Science, 1991
- Nature of the hydride species on the hydrogenated silicon (111)-(7 .times. 7) surfaceThe Journal of Physical Chemistry, 1991
- Radio frequency plasma etching of Si/SiO2 by Cl2/O2 : Improvements resulting from the time modulation of the processing gasesJournal of Vacuum Science & Technology B, 1990
- Growth of Amorphous, Microcrystalline, and Epitaxial Silicon in Low Temperature Plasma DepositionMRS Proceedings, 1990
- Control of Chemical Reactions for Growth of Crystalline Si at Low Substrate TemperatureMRS Proceedings, 1989
- Formation kinetics and control of microcrystallite in μc-Si:H from glow discharge plasmaJournal of Non-Crystalline Solids, 1983
- A thermodynamic criterion of the crystalline-to-amorphous transition in siliconPhilosophical Magazine Part B, 1982