Si Metal Insulator Semiconductor Tunnel Emitter Transistor (Si MIS TET)

Abstract

A Si metal-insulator-semiconductor tunnel emitter transistor which has quite a thin base layer formed by an inversion hole layer was fabricated. A common emitter current gain of 5 was obtained at room temperature. The emitter base bias at which the base current began to flow coincided well with the calculated turn on voltage at which the inversion occurred in the MIS structure. It was confirmed for the first time that the inversion hole layer really worked as the base of the transistor.