Measurement of surface recombination velocity in silicon by steady-state photoconductance
- 1 May 1958
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 5 (3), 171-179
- https://doi.org/10.1016/0022-3697(58)90066-0
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Spectral Distribution of PhotoconductivityPhysical Review B, 1956
- Measurement of the Lifetime of Minority Carriers in GermaniumJournal of Applied Physics, 1955
- Injected Current Carrier Transport in a Semi-Infinite Semiconductor and the Determination of Lifetimes and Surface Recombination VelocitiesJournal of Applied Physics, 1955
- Measurement of surface recombination on germaniumPhysica, 1954
- Photoelectromagnetic and Photodiffusion Effects in GermaniumProceedings of the Physical Society. Section B, 1953
- -Type Surface Conductivity on-Type GermaniumPhysical Review B, 1953
- Surface Properties of GermaniumBell System Technical Journal, 1953