The use of magnetic fields in semiconductor crystal growth
- 1 August 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 113 (1-2), 305-328
- https://doi.org/10.1016/0022-0248(91)90036-5
Abstract
No abstract availableThis publication has 64 references indexed in Scilit:
- Onset of oscillatory flow in a Czochralski growth melt and its suppression by magnetic fieldJournal of Crystal Growth, 1990
- Boundary layers in magnetic Czochralski crystal growthJournal of Crystal Growth, 1989
- Silicon crystal growth in a cusp magnetic fieldJournal of Crystal Growth, 1989
- Dopant segregation during vertical Bridgman-Stockbarger growth with melt stabilization by strong axial magnetic fieldsJournal of Crystal Growth, 1987
- Effects of an axial magnetic field on solute distribution in Czochralski grown crystals - a further analysisJournal of Crystal Growth, 1987
- Numerical simulations of the Czochralski bulk flow in an axial magnetic field: Effects on the flow and temperature oscillations in the meltJournal of Crystal Growth, 1985
- Czochralski crystal growth in an axial magnetic field: effects of Joule heatingJournal of Crystal Growth, 1983
- Magnetic field effects on float-zone Si crystal growthJournal of Crystal Growth, 1983
- An experimental model of the flow in Czochralski growthJournal of Crystal Growth, 1983
- Influence of magnetic field on vertical Bridgman-Stockbarger growth of InxGa1 − xSbJournal of Crystal Growth, 1978