Electrical properties of ion-implanted polyacetylene films

Abstract

Ion-implantation studies of (CH)x films were carried out with ∼10-keV sodium ions. The temperature dependence of the sheet resistance of the implanted layer exhibited a thermal-activation-type behavior. Its activation energy decreased with increasing the ion dose. A long-term observation of the capacitance-voltage characteristics of an implanted p-n junction showed that a step junction was formed long after implantation as a result of the competition between defects annealing and dopants diffusion. These results ensure that low-energy ion implantation is a useful process for the n-type doping of (CH)x.