Photoluminescence in lightly doped epitaxial GaAs: Cd and GaAs:Si
- 1 May 1969
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 30 (5), 1289-1293
- https://doi.org/10.1016/0022-3697(69)90392-8
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Radiative Capture by Impurities in SemiconductorsPhysical Review B, 1967
- Application of quantum defect techniques to photoionization of impurities in semiconductorsJournal of Physics and Chemistry of Solids, 1967
- Radiative Recombination in-Type InPPhysical Review B, 1967
- Temperature Dependence of Photoluminescence in Cadmium-Doped Epitaxial GaAsJournal of Applied Physics, 1967
- Frequency Shift with Temperature as Evidence for Donor-Acceptor Pair Recombination in Relatively Pure-Type GaAsPhysical Review B, 1967
- Spontaneous and Stimulated Recombination Radiation in SemiconductorsPhysical Review B, 1964
- Optical Transitions Involving Impurities in SemiconductorsPhysical Review B, 1963
- Relation between Absorption and Emission Probabilities in Luminescent Centers in Ionic SolidsPhysical Review B, 1962
- Optical absorption and recombination radiation in semiconductors due to transitions between hydrogen-like acceptor impurity levels and the conduction bandJournal of Physics and Chemistry of Solids, 1960
- Photon-Radiative Recombination of Electrons and Holes in GermaniumPhysical Review B, 1954