Understanding of Thin Film Transistor Electrical Measurements in the Light of the Defect Pool Model
- 1 January 1994
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- The role of the gate insulator in the defect pool model for hydrogenated amorphous silicon thin film transistor characteristicsJournal of Applied Physics, 1993
- Defect chemical potential and the density of states in amorphous siliconPhysical Review Letters, 1993
- Amorphous Silicon Image Sensor ArraysMRS Proceedings, 1992
- A defect-pool model for near-interface states in amorphous silicon thin-film transistorsPhilosophical Magazine Part B, 1991
- Thermal bias annealing evidence for the defect pool in amorphous silicon thin-film transistorsApplied Physics Letters, 1990
- Chemical-equilibrium description of the gap-state distribution ina-Si:HPhysical Review Letters, 1989
- Structure and Electronic States in Disordered SystemsPhysical Review Letters, 1986
- Characteristics of amorphous silicon staggered-electrode thin-film transistorsApplied Physics Letters, 1984
- Analysis of field-effect-conductance measurements on amorphous semiconductorsPhilosophical Magazine Part B, 1981
- Investigation of the localised state distribution in amorphous Si filmsJournal of Non-Crystalline Solids, 1972