Determination of Transient Response of Semiconductor Detectors by Use of a Nanosecond-Pulse Electron Accelerator

Abstract

An apparatus previously developed and used for determination of scintillator response characteristics has been used for similar studies of the transient response of semiconductor nuclear detectors. With this apparatus a detector pulse as short as 1.2 nsec has been observed. Pulses have been recorded for diffused junction and lithium-drift diodes, in silicon. The effects of depletion-depth, base resistance and electric filed intensity in the depletion region are revealed in the shape of the pulse. The experimental method and the application of the apparatus to measurement of detector properties is discussed.